低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响

朱从桦; 张

doi:10.13870/j.cnki.stbcxb.2017.01.050

您当前的位置：

首页 >

文章列表页 >

低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响

更新时间：2025-03-12

- 低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响
- Silicon Application on Silicon and Phosphorus Nutrition and Chlorophyll Fluorescence Parameters of Maize during Seedling Stage under Low Phosphorus Stress
- 水土保持学报 2017年31卷第1期页码：303-309
- 作者机构：
  
  1. 四川农业大学农学院,成都,611130
  2. 四川省农业科学院植物保护研究所,成都,610066
- 作者简介：
- 基金信息：
  
  国家科技支撑计划项目(2012BAD04B13-2)公益性行业(农业)科研专项(20150312705)
- DOI：10.13870/j.cnki.stbcxb.2017.01.050
  中图分类号： Q945.1
- 纸质出版：2017
- 稿件说明：
移动端阅览
朱从桦, 张. 低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响[J]. 水土保持学报, 2017,31(1):303-309.

ZHU Conghua1, 2. Silicon Application on Silicon and Phosphorus Nutrition and Chlorophyll Fluorescence Parameters of Maize during Seedling Stage under Low Phosphorus Stress[J]. 2017, 31(1): 303-309.
朱从桦, 张. 低磷胁迫下加硅对玉米苗期硅、磷营养及叶绿素荧光参数的影响[J]. 水土保持学报, 2017,31(1):303-309. DOI： 10.13870/j.cnki.stbcxb.2017.01.050.

ZHU Conghua1, 2. Silicon Application on Silicon and Phosphorus Nutrition and Chlorophyll Fluorescence Parameters of Maize during Seedling Stage under Low Phosphorus Stress[J]. 2017, 31(1): 303-309. DOI： 10.13870/j.cnki.stbcxb.2017.01.050.

摘要

为研究硅对低磷胁迫下玉米苗期硅、磷吸收积累和叶绿素荧光参数的影响。采用砂培方式模拟低磷胁迫环境，以玉米品种正红2号和正红115为供试材料，设置3个磷浓度：重度低磷胁迫P1(0.01mmol/L)、中度低磷胁迫P2(0.1 mmol/L)和正常磷浓度P3(1 mmol/L)，设置3个硅浓度：Si1(0mmol/L)、Si2(0.75mmol/L)和Si3(1.5mmol/L)，定苗培养28d，测定植株顶部往下第1全展叶叶绿素荧光参数、植株干物质重、硅和磷素含量和积累量。结果表明：（1）磷浓度从P3降低至P2和P1，2个玉米品种平均，单株干物质积累量、硅积累量、磷积累量分别下降34.73%和39.26%、29.10%和33.01%、81.81%和87.63%；同时降低叶片PSⅡ反应中心开放程度、减弱光能捕和光能转换能力、降低电子传递效率，导致植株叶片热耗散能力明显增强。（2）硅浓度从Si1增加至Si2和Si3，2个玉米品种平均，单株干物质积累量、硅积累量、磷积累量分别提高21.54%和36.05%、120.08%和236.65%、39.81%和69.17%；同时增加叶片PSⅡ反应中心开放程度，提高光能捕获和光能转换效率，增加电子传递效率，加速利用过剩激发能。（3）玉米植株硅积累量和磷积累量显著正相关，并且Fv/Fm(XE)、Fv′/Fm′(XE′)、Fq′/Fm′(φPSⅡ)、ETR与植株硅积累量和磷积累量也显著正相关。在P3和P2处理中，与Si1相比，Si2和Si3能明显提高正红2号和正红115植株硅、磷素积累量，提高叶片对光能的捕获、转化和传递效率，提高植株的干物质积累量；在重度低磷胁迫P1处理中施硅对玉米幼苗硅、磷营养和叶绿素荧光参数的改善作用十分微弱。综上所述，在非严重低磷胁迫条件下，外源施硅通过增强玉米对硅、磷的吸收和积累，提高叶片光合物质生产能力，加速消耗过剩的激发能，减轻光抑制。

Abstract

Under low phosphorus stress

the benefits of Si application on improving Si accumulation

P accumulation and chlorophyll fluorescence parameters of maize during seedling stage were investigated using medium ZH2 and ZH115 by sand culture experiment. The treatments consisted of three P levels (0.01 mmol/L

0.1 mmol/L and 1 mmol/L) and three Si (0 mmol/L

0.75 mmol/L and 1.5 mmol/L). Maize seedlings were incubated for 28 days

then the items were measured

including chlorophyll fluorescence parameters of the first top fully expanded leaf

dry matter accumulation

Si content and accumulation

P content and accumulation. The main results were as follows: (1)The dry matter accumulation

Si and P accumulation amount of these two varieties (ZH2 and ZH115) reduced by 34.73% and 39.26%

29.10% and 33.01%

81.81% and 87.63% in average

meanwhile the open degree of PSⅡ reaction center

efficiency of lightcapture

efficiency of light energy transformation and electron transportation of the leaf all decreased significantly

and heat dissipation of the leaf also increased with P concentration from P3 to P2 and P1 in culture medium. (2)The dry matter accumulation

Si and P accumulation amount of these two varieties (ZH2 and ZH115) increased by 21.54% and 36.05%

120.08% and 236.65%

39.81% and 69.17% in average

meanwhile the open degree of PSⅡ reaction center

efficiency of lightcapture

efficiency of light energy transformation and electron transportation of leaf also increased significantly with Si concentration from Si1 to Si2 and Si3 in culture medium. (3)There were significantly positive correlation between P accumulation and Si accumulation in plant. Fv/Fm (XE)

Fv′/Fm′ (XE′)

Fq′/Fm′ (φPSⅡ)

and ETR showed significantly positive correlation with P accumulation in plant

and the same with Si accumulation. When P concentration in culture medium was 1 mmol/L or 0.1 mmol/L

comparing to treatment of Si1

dry matter accumulation

Si accumulation

P accumulation

efficiency of light energy transformation and electron transportation of ZH2 and ZH115 all increased under the treatment of Si2 and Si3; but the treatment of Si2 and Si3 on improving above items was very weak when P concentration in culture medium was 0.01 mmol/L. In summary

the improvements in phosphorus deficiency tolerance of maize were resulted from increasing Si and P uptake and accumulation in plant

efficiency of light energy transformation and electron transportation of leaf

and decreasing in photo inhibition by Si application

even these benefit of it could be found more under normal P level.

关键词

Keywords

references

浏览量

1255

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据